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Studies on the nitrogen ion irradiation induced defects in n-GaAs by deep level transient spectroscopy

✍ Scribed by P. Jayavel; K. Santhakumar; K. Asokan

Book ID
114167777
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
279 KB
Volume
212
Category
Article
ISSN
0168-583X

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Deep level transient spectroscopy (DLTS)
Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
✍ C. Nyamhere; A.G.M. Das; F.D. Auret; A. Chawanda; C.A. Pineda-Vargas; A. Venter πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 373 KB

Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1 Γ‚ 10 13 protons/cm 2 . The results show that proton irradiation resulted in primary hole traps at E V ΓΎ0.15 and E V ΓΎ