Many-body effects on modulation-doped InAs/GaAs quantum dots
โ Scribed by Lee, Joo In; Lee, Hyung Gyoo; Shin, Eun-joo; Yu, Sungkyu; Kim, Dongho; Ihm, Gukhyung
- Book ID
- 121723382
- Publisher
- American Institute of Physics
- Year
- 1997
- Tongue
- English
- Weight
- 341 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.119031
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We present the carrier relaxation of modulation-doped InAs=GaAs quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-resolved spectroscopy. At the excitation below GaAs band gap, the relaxation processes become very slow, implying the observation
InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 8C). With increasing excitation densi