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Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

โœ Scribed by Jang, Y. D.; Park, J.; Lee, D.; Mowbray, D. J.; Skolnick, M. S.; Liu, H. Y.; Hopkinson, M.; Hogg, R. A.

Book ID
121507110
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
443 KB
Volume
95
Category
Article
ISSN
0003-6951

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We present the carrier relaxation of modulation-doped InAs=GaAs quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-resolved spectroscopy. At the excitation below GaAs band gap, the relaxation processes become very slow, implying the observation