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Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

โœ Scribed by Beaumont, B.; Haffouz, S.; Gibart, P.


Book ID
121501510
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
449 KB
Volume
72
Category
Article
ISSN
0003-6951

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Selective Growth of Cubic GaN on Pattern
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl