๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

MA-3 E-beam exposure for semiconductor device lithography

โœ Scribed by Weber, E.V.; Moore, R.D.


Book ID
114592844
Publisher
IEEE
Year
1978
Tongue
English
Weight
170 KB
Volume
25
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


E-beam lithography for sub-micron MOS-de
โœ R.D.J. Verhaar; J.W. Bartsen; J.G. Dil; C.A.H. Juffermans; J.J.M.J. de Klerk; H. ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 730 KB
Process latitude enhancement for 3D stru
โœ V.A. Kudryashov; V.V. Krasnov; P.D. Prewett; T.J. Hall ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 295 KB

Investigation of the positive resist dissolution process under low-energy e-bemn exposure has given rise to a new technology of 3D structure fonnation. This technology has a higher process latitude, which is of great hnportance for commercial prt~uction, and is cheap and e,xsy. Multilayer technologi