The evolution of oxygen precipitates (OPs) created at 900-1000 K in Si-Cz with initial oxygen concentration 8 Γ 1017 cm -3 was studied by DLTS technique. The samples were subjected to high pressure (HP) treatment up to 1.3 GPa at high temperature (HT, 1230-1550 K) which caused a partial dissolution
β¦ LIBER β¦
Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure
β Scribed by A. Misiuk; B. Surma; B. Surma; L. Rebohle; J. Jun; I. V. Antonova; I. Tyschenko; A. Romano-Rodriguez; M. Lopez
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 160 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
DLTS study of oxygen precipitates in sil
β
I.V. Antonova; A. Misiuk; V.P. Popov; L.I. Fedina; S.S. Shaimeev
π
Article
π
1996
π
Elsevier Science
π
English
β 468 KB
Electrical and Structural Properties of
β
A. Kudla; A. Misiuk; A. Panas; J. Bak-Misiuk
π
Article
π
2002
π
John Wiley and Sons
π
English
β 145 KB
π 2 views
Structure of Oxygen - Implanted Silicon
β
A. Misiuk; A. Barcz; J. Ratajczak; J. Katcki; J. Bak-Misiuk; L. Bryja; B. Surma;
π
Article
π
2001
π
John Wiley and Sons
π
English
β 636 KB
Post-growth annealing of zinc oxide thin
β
M. Rusop; K. Uma; T. Soga; T. Jimbo
π
Article
π
2006
π
Elsevier Science
π
English
β 260 KB
Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at
Structural and photo-luminescence proper
β
Atif Mossad Ali; Takao Inokuma; Seiichi Hasegawa
π
Article
π
2006
π
Elsevier Science
π
English
β 455 KB
The effect of annealing time in oxygen f
β
M. Abatal; E. Chavira; C. Filippini; V. GarcΓa-VΓ‘zquez; J.C. PΓ©rez; J.L. Tholenc
π
Article
π
2005
π
Elsevier Science
π
English
β 622 KB