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Electrical and Structural Properties of Oxygen-Containing Silicon Annealed at 670–720 K Under High Stress

✍ Scribed by A. Kudla; A. Misiuk; A. Panas; J. Bak-Misiuk


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
145 KB
Volume
4
Category
Article
ISSN
1438-1656

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