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Luminescence of hafnium dioxide films produced from hafnium dipivaloylmethanate

✍ Scribed by V. I. Belyi; A. A. Rastorguev

Publisher
Springer
Year
2007
Tongue
English
Weight
280 KB
Volume
50
Category
Article
ISSN
1573-9228

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## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow