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Luminescence behavior and compensation effect of N-doped ZnO films deposited by rf magnetron sputtering under various gas-flow ratios of O2/N2

✍ Scribed by Cho, Wei-Min; Lin, Yow-Jon; Liu, Chia-Jyi; Chen, Liang-Ru; Shih, Yu-Tai; Chen, Perry


Book ID
123029415
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
887 KB
Volume
145
Category
Article
ISSN
0022-2313

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The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstruc