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LPE growth of GaAs1−xSbx

✍ Scribed by E. Lendvay; T. Görög; A.L. Tóth

Book ID
107789239
Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
625 KB
Volume
53
Category
Article
ISSN
0022-0248

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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob