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LPE growth of GaAs-Ga1-xAlxAs solar cells

✍ Scribed by J.M. Woodall; H.J. Hovrl

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 726 KB
Volume: 39
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(77)90158-0

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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob