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LPE Growth of Ga1 – xInxSb Multi-grading Layers

✍ Scribed by Gong Xiuying; Kazuhiko Okitsu; Tetsuo Ozawa; Yasuhiro Hawakawa; Prof. Tomou Yamaguchi; Masashi Kumagawa


Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
411 KB
Volume
27
Category
Article
ISSN
0232-1300

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Optical properties of Ga1–xInxAs LPE-lay
✍ Doz. Dr. A. Zehe; Prof. Dr. E. Butter; Dr. B. Jacobs; J. Stary 📂 Article 📅 1975 🏛 John Wiley and Sons 🌐 English ⚖ 491 KB

The multiple layer structure nGaAs(n Gal \_,In,As) p Gal \_,In,As (0 5 x 5 0.18) was realized by liquid phase epitaxy from I1i-Ga-As-melts on (1 11)-oriented GaAs substrates. The InAs-content of the mixed crystal layers was found to be dominating for crystal perfection and growth rate. The cathodol