Optical properties of Ga1–xInxAs LPE-layers and p-n structures

✍ Scribed by Doz. Dr. A. Zehe; Prof. Dr. E. Butter; Dr. B. Jacobs; J. Stary

• Publisher: John Wiley and Sons
• Year: 1975
• Tongue: English
• Weight: 491 KB
• Volume: 10
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19750100209

✦ Synopsis

The multiple layer structure nGaAs(n Gal _,In,As) p Gal _,In,As (0 5 x 5 0.18) was realized by liquid phase epitaxy from I1i-Ga-As-melts on (1 11)-oriented GaAs substrates. The InAs-content of the mixed crystal layers was found to be dominating for crystal perfection and growth rate.

The cathodoliimiriescencc! spectra of parid n-type Gal -,In,As and the spectral distribution of the electroluminescerice from pn-jurictioris were me;isurctl a t T = 7 7 K ant1 300 K.

The external quantum efficiency was found t o h a r e a maximum for diodes Xvith z z x 0.006. This is caused by the decrease of t h e opt.iea1 absorption wit.h increasing z arict increasing dislocation deiisit,y on the other hand.

Dic Mehrschichtanordnung riGaAs(riGal_,Iri,As) p G a l ~

.rIn,As (0 5 . z 5 0,18) wurdc inittels Flhssigphaseriepitaxie a i l s In-Ua-As-Schmclzeii aiif (1 1 l ) -r o i n r i t i ~r t e n GaAs-Substraten hcrgestellt. Kristal1perfelitioii und ~~itchst.unisgcsch\.iiirlig.ltcit, tlrr Mischkristallschichtcii sind vom InAs-Cclialt abhiirigig. Die Kntodolnniiiiesxeiix von pulid n-Ga1 -,Iri,As solvie, dicl spcktralr Vertciluiig dcr Elcktloliimiricszcrix wurden bei T = 77 K u n c t 300 I< gemesseri.

Dici iiizBrrc Quantenausbeute y o n Lnrriiiit.szriiz~iocieri zeigt cin &fitximum hei ~t ' z 0,006.

Das xvird auf die mit steigendem x geringcr iverdcnde optisclie Absorption cincrseits und dir ziiiiehniendc Vcrsetxungsdichte andercrscits zuruckgefiilirt.