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Dependence of Ga1-xAlxAs LPE layer thickness on solution composition

✍ Scribed by S. Isozumi; Y. Komatsu; N. Okazaki; S. Koyama; T. Kotani


Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
498 KB
Volume
41
Category
Article
ISSN
0022-0248

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The dependence of surface morphology of
✍ I. M. Yordanova; Dr. L. D. Pramatarova πŸ“‚ Article πŸ“… 1983 πŸ› John Wiley and Sons 🌐 English βš– 499 KB πŸ‘ 2 views

The pre5rllt work shows the tlepentlence of surface iiiorphology of thc GaSb and AI,Gal -zSb epitaxial layers on the conditions of LPE growth. It is found that for LPE growth at 500 " C a siipersaturation of 5 -1 0 "C and a cooling rate of 0.24-0.4 "C/min for GaSb epitaxial layers and 0.8-1.2 "C/rni