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Dependence of GaAs LPE layer thickness on growth temperature

✍ Scribed by R.L. Moon; S.I. Long

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
371 KB
Volume
32
Category
Article
ISSN
0022-0248

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LPE-growth of InP on GaAs
LPE-growth of InP on GaAs
✍ Dr. B. Jacobs; Prof. Dr. E. Butter; B. Dobner πŸ“‚ Article πŸ“… 1978 πŸ› John Wiley and Sons 🌐 English βš– 318 KB

## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob