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LPE growth of AlGaInAs epitaxial layers on GaAs(100)

✍ Scribed by Prem Swarup; R.K. Jain; S.N. Verma; S. Charan; D.M. Tandle

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 786 KB
Volume: 63
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(83)90433-5

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## Abstract LPE growth of InP on GaAs is shown to be possible from indium or tin as a solvent, respectively. Only growth on (111) B faces yields acceptable smooth layers. From In/InP‐melts layers with inclusions near the heterojunctions are obtained. No such microscopically small inclusions were ob