✦ LIBER ✦

OMVPE growth of GaAs1-xSbx: solid composition

✍ Scribed by G.B. Stringfellow; M.J. Cherng

Publisher: Elsevier Science
Year: 1983
Tongue: English
Weight: 274 KB
Volume: 64
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(83)90156-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

OMVPE growth of GaAs using dimethylarsin

OMVPE growth of GaAs using dimethylarsine

✍ C.H. Chen; E.H. Reihlen; G.B. Stringfellow 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 974 KB

Orientation dependence of GaAs growth in

Orientation dependence of GaAs growth in low-pressure OMVPE

✍ K. Kamon; M. Shimazu; K. Kimura; M. Mihara; M. Ishii 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 819 KB

Growth of GaAs1 - xPx bulk crystals with

Growth of GaAs1 - xPx bulk crystals with homogeneous composition

✍ Takeshi Saito; Yasuo Seki 📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 330 KB

Compositional dependence of Schottky bar

Compositional dependence of Schottky barrier heights of Au on MBE grown GaAs1−xSbx

✍ J.H. Zhao; P.F. Tang; J. Jeong 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 445 KB

OMVPE growth of AlxGa1−xAs

✍ G.B. Stringfellow 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 796 KB

MBE growth and characterization of GaAs1

MBE growth and characterization of GaAs1−xSbx epitaxial layers on Si (0 0 1) substrates

✍ T. Toda; F. Nishino; A. Kato; T. Kambayashi; Y. Jinbo; N. Uchitomi 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 217 KB

We investigated the growth of GaAs 1Àx Sb x (x ¼ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM