๐”– Bobbio Scriptorium
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Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

โœ Scribed by Meyerson, B. S.

Book ID
126072329
Publisher
American Institute of Physics
Year
1986
Tongue
English
Weight
448 KB
Volume
48
Category
Article
ISSN
0003-6951

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๐Ÿ“œ SIMILAR VOLUMES

Lateral growth of monocrystalline Ge on
Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition
โœ V.D. Cammilleri; V. Yam; F. Fossard; C. Renard; D. Bouchier; Y. Zheng; P.F. Fazz ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 309 KB

The lateral growth of Ge on, both, chemically and thermally formed silicon oxide layers, from nanoscale silicon seed is studied. We have developed a method using standard local oxidation of silicon to create well-localized nanoscale silicon seeds that enable to grow Ge on thick thermal silicon oxide