Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition

✍ Scribed by V.D. Cammilleri; V. Yam; F. Fossard; C. Renard; D. Bouchier; Y. Zheng; P.F. Fazzini; F. Houdellier; M. Hÿtch

• Book ID: 104064268
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 309 KB
• Volume: 11
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2008.07.003

✦ Synopsis

The lateral growth of Ge on, both, chemically and thermally formed silicon oxide layers, from nanoscale silicon seed is studied. We have developed a method using standard local oxidation of silicon to create well-localized nanoscale silicon seeds that enable to grow Ge on thick thermal silicon oxide. The germanium growth starts selectively from the silicon seed lines and proceeds by wetting the SiO 2 layer. Analysis by high-resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide were perfectly monocrystalline and are free of defect. The only detected defects are situated at the Ge/Si interface.