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High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

✍ Scribed by Tang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; Maa, Jer-Shen; Liu, Chee-Wee; Luo, Guang-Li; Trinh, Hai-Dang; Su, Yung-Hsuan

Book ID
121307120
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
746 KB
Volume
98
Category
Article
ISSN
0003-6951

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We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 Β°C without thermal annealing and allowing the integration w