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Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors

✍ Scribed by Dalong Zhao; Devin A. Mourey; Thomas N. Jackson

Book ID
107455691
Publisher
Springer US
Year
2009
Tongue
English
Weight
428 KB
Volume
39
Category
Article
ISSN
0361-5235

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## Abstract Hybrid organic/inorganic SiO~__x__~C~__y__~H~__z__~ thin films are prepared on Cu, Si(100), and SiO~2~ substrates by plasma‐enhanced (PE)CVD using tetramethoxysilane (TMOS) as the precursor compound. Depositions are performed from Ar plasmas at temperatures as low as 60 °C, avoiding the