Low-Temperature PECVD of Transparent SiOxCyHz Thin Films
β Scribed by D. Barreca; A. Gasparotto; C. Maccato; C. Maragno; E. Tondello; G. Rossetto
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 439 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0948-1907
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β¦ Synopsis
Abstract
Hybrid organic/inorganic SiO~x~C~y~H~z~ thin films are prepared on Cu, Si(100), and SiO~2~ substrates by plasmaβenhanced (PE)CVD using tetramethoxysilane (TMOS) as the precursor compound. Depositions are performed from Ar plasmas at temperatures as low as 60βΒ°C, avoiding the use of oxidizing reagents in view of possible film application as protective coatings against substrate oxidation. In situ monitoring of deposition processes is performed using laser reflection interferometry (LRI), which provides valuable information on the growth rate as a function of the adopted synthesis conditions. The obtained film thickness values are confirmed by scanning electron microscopy (SEM), which is also used to investigate the film morphology and its adhesion to the substrate. The chemical structure and composition are investigated in detail by a combined use of energy dispersive Xβray spectroscopy (EDX), Fourier transform infrared (FTIR) spectroscopy, and Xβray photoelectron spectroscopy (XPS). Glancing incidence Xβray diffraction (GIXRD) and UVβvis spectroscopy are used for the study of the structural and optical properties of the system. Finally, nanoindentation measurements permit the evaluation ofΒ the hardness of the synthesized coatings. Amorphous layers with a silicaβlike network incorporating covalently bonded methyl and methoxy groups are obtained under very mild synthesis conditions. Furthermore, the coatings are characterized by good substrate conformal coverage and remarkable optical transparency.
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