𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Low-Temperature PECVD of Transparent SiOxCyHz Thin Films

✍ Scribed by D. Barreca; A. Gasparotto; C. Maccato; C. Maragno; E. Tondello; G. Rossetto


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
439 KB
Volume
13
Category
Article
ISSN
0948-1907

No coin nor oath required. For personal study only.

✦ Synopsis


Abstract

Hybrid organic/inorganic SiO~x~C~y~H~z~ thin films are prepared on Cu, Si(100), and SiO~2~ substrates by plasma‐enhanced (PE)CVD using tetramethoxysilane (TMOS) as the precursor compound. Depositions are performed from Ar plasmas at temperatures as low as 60 °C, avoiding the use of oxidizing reagents in view of possible film application as protective coatings against substrate oxidation. In situ monitoring of deposition processes is performed using laser reflection interferometry (LRI), which provides valuable information on the growth rate as a function of the adopted synthesis conditions. The obtained film thickness values are confirmed by scanning electron microscopy (SEM), which is also used to investigate the film morphology and its adhesion to the substrate. The chemical structure and composition are investigated in detail by a combined use of energy dispersive X‐ray spectroscopy (EDX), Fourier transform infrared (FTIR) spectroscopy, and X‐ray photoelectron spectroscopy (XPS). Glancing incidence X‐ray diffraction (GIXRD) and UV‐vis spectroscopy are used for the study of the structural and optical properties of the system. Finally, nanoindentation measurements permit the evaluation ofΒ the hardness of the synthesized coatings. Amorphous layers with a silica‐like network incorporating covalently bonded methyl and methoxy groups are obtained under very mild synthesis conditions. Furthermore, the coatings are characterized by good substrate conformal coverage and remarkable optical transparency.


πŸ“œ SIMILAR VOLUMES