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Characteristics of PECVD GaN thin films

✍ Scribed by C.H. Lee; C.T. Chen

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
231 KB
Volume
92
Category
Article
ISSN
0169-4332

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## Abstract Hybrid organic/inorganic SiO~__x__~C~__y__~H~__z__~ thin films are prepared on Cu, Si(100), and SiO~2~ substrates by plasma‐enhanced (PE)CVD using tetramethoxysilane (TMOS) as the precursor compound. Depositions are performed from Ar plasmas at temperatures as low as 60 °C, avoiding the