ChemInform Abstract: Luminescence Characteristics of Er-Doped GaN Semiconductor Thin Films
β Scribed by J. M. Zavada; Myo Thaik; U. Hoemmerich; J. D. MacKenzie; C. R. Abernathy; S. J. Pearton; R. G. Wilson
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 26 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0931-7597
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Erbium (Er 3+ ) doped LiNbO 3 single crystal thin films have been grown LiNbO 3 (001) substrate by the liquid phase epitaxy method. The crystallinity was determined by high-resolution X-ray diffraction. The lattice mismatch between Er 3+ doped LiNbO 3 films and LiNbO 3 (001) substrate was investigat
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