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Low-temperature metalorganic chemical vapor deposition of Al2O3 for advanced complementary metal-oxide semiconductor gate dielectric applications

✍ Scribed by Skordas, Spyridon; Papadatos, Filippos; Nuesca, Guillermo; Sullivan, John J.; Eisenbraun, Eric T.; Kaloyeros, Alain E.

No coin nor oath required. For personal study only.

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