✦ LIBER ✦

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

✍ Scribed by Sazonov, A.; Striakhilev, D.; Lee, C.-H.; Nathan, A.

Book ID: 118694975
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 646 KB
Volume: 93
Category: Article
ISSN: 0018-9219
DOI: 10.1109/jproc.2005.851497

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-temperature materials and thin-film

Low-temperature materials and thin-film transistors for electronics on flexible substrates

✍ A. Sazonov; M. Meitine; D. Stryakhilev; A. Nathan 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 242 KB

New approach to flexible thin-film trans

New approach to flexible thin-film transistors: Electronic materials

✍ Cordelia Sealy 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 118 KB

Low temperature amorphous silicon channe

Low temperature amorphous silicon channel material for polysilicon thin film transistors

✍ R.T Fulks; J Ho; J.B Boyce; G.A Davis; V Aebi 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 138 KB

Materials optimization for thin film tra

Materials optimization for thin film transistors fabricated at low temperature on plastic substrate

✍ Andrei Sazonov; Arokia Nathan; Denis Striakhilev 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 212 KB

Low-Voltage Organic Thin-Film Transistor

Low-Voltage Organic Thin-Film Transistors with High-k Nanocomposite Gate Dielectrics for Flexible Electronics and Optothermal Sensors

✍ M. Zirkl; A. Haase; A. Fian; H. Schön; C. Sommer; G. Jakopic; G. Leising; B. Sta 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 650 KB

12-GHz Thin-Film Transistors on Transfer

12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics

✍ Lei Sun; Guoxuan Qin; Jung-Hun Seo; George K. Celler; Weidong Zhou; Zhenqiang Ma 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 924 KB

## Abstract Multigigahertz flexible electronics are attractive and have broad applications. A gate‐after‐source/drain fabrication process using preselectively doped single‐crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this