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New approach to flexible thin-film transistors: Electronic materials

✍ Scribed by Cordelia Sealy

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
118 KB
Volume
8
Category
Article
ISSN
1369-7021

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## Abstract Multigigahertz flexible electronics are attractive and have broad applications. A gate‐after‐source/drain fabrication process using preselectively doped single‐crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this