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Low-temperature LPE Overgrowth of InGaAs/InP Mesa Heterostructure

✍ Scribed by O. Procházková Follner; J. Novotný

Book ID
102812434
Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
502 KB
Volume
28
Category
Article
ISSN
0232-1300

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✦ Synopsis

Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic

Low-temperature LPE Overgrowth of InGaAslInP Mesa Heterostructure

Preparation of planar buried mesa ridge (PBMR) epitaxial wafers suitable for integrated optoelectronic circuits is presented. For this purpose the LPE growth of InP and InGaAsP (A, = 1.3 pm) below 600 "C on nonplanar ridge pattern was realized. Etching of the InGaAsP/InP ridge structure with ridge of 2-2.5 pm was found to be reproducible when HBr : H202 : H 2 0 etchant was used. The best PBMR epitaxial wafers were obtained via regrowth in multiple-bin sliding boat by two thin layers of InP using a combination of one-and two-phase growth processes between 600 and 594 "C.

📜 SIMILAR VOLUMES

LPE Growth of GaInAsP/InP Heterostructur
LPE Growth of GaInAsP/InP Heterostructures for 1.3 μm Planar Buried Mesa Lasers
✍ Ing. Dr. Sc. J. Novotný; O. Procházková 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 488 KB

## LPE Growth of GaInAsP/InP Heterostructures for 1.3 pm Planar Buried Mesa Lasers LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/In