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LPE growth of InP/InGaAsP/InGaAs/InP heterostructure at normal cooling rate at 630°C

✍ Scribed by K. Ohtsuka; T. Matsui; H. Ogata


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
337 KB
Volume
87
Category
Article
ISSN
0022-0248

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