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Low-temperature LPE growth and characterization of InGaAs ternary alloys

✍ Scribed by Minoru Kubo; Yoichi Sasai; Yoshiaki Yoshioka; Motosugu Ogura

Book ID
107789671
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
464 KB
Volume
73
Category
Article
ISSN
0022-0248

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Institute of Radio Engineering and Electronics, Academy of Sciences of the Czech Republic ## Low-temperature LPE Overgrowth of InGaAslInP Mesa Heterostructure Preparation of planar buried mesa ridge (PBMR) epitaxial wafers suitable for integrated optoelectronic circuits is presented. For this pur