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Low temperature growth of p-type crystalline silicon films by ECR plasma CVD

โœ Scribed by Licai Wang; H.S. Reehal


Book ID
114086745
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
387 KB
Volume
343-344
Category
Article
ISSN
0040-6090

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The stability of hydrogen plasma intensity generated by the ECR technique was investigated. H a intensity decreased with the increase of temperature of the chamber's inside wall. The square root of the H a intensity and the etch rate of silicon were proportional to the microwave power. For the depos