Etching action by atomic hydrogen and lo
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K. Sasaki; H. Tomoda; T. Takada
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Article
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1998
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Elsevier Science
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English
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The stability of hydrogen plasma intensity generated by the ECR technique was investigated. H a intensity decreased with the increase of temperature of the chamber's inside wall. The square root of the H a intensity and the etch rate of silicon were proportional to the microwave power. For the depos