Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD

✍ Scribed by K. Sasaki; H. Tomoda; T. Takada

• Book ID: 104266143
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 374 KB
• Volume: 51
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00250-4

✦ Synopsis

The stability of hydrogen plasma intensity generated by the ECR technique was investigated. H a intensity decreased with the increase of temperature of the chamber's inside wall. The square root of the H a intensity and the etch rate of silicon were proportional to the microwave power. For the deposition of a crystalline silicon film the deposition rate increased with the increase of the hydrogen gas flow rate while for the case of an amorphous silicon film the deposition rate decreased. A silicon epitaxial film with excellent crystalline quality was successfully realized at 4508C.