✦ LIBER ✦

Low temperature growth of AlN films by microwave plasma chemical vapour deposition using an AlBr3-H2-N2 gas system

✍ Scribed by Yoshihiro Someno; Makoto Sasaki; Toshio Hirai

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 661 KB
Volume: 202
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(91)90104-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

〈0001〉-oriented growth of AlN films on S

〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system

✍ Guangyao Meng; Xi Liu; Song Xie; Dingkun Peng 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 479 KB

Synthesis of Boron Nitride Films Using E

Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H2–BF3–N2–Ar–He Gas System

✍ C.-Y. Chan; W. Zhang; K.-M. Chan; I. Bello; S.-T. Lee 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 256 KB

## Abstract Boron nitride (BN) films with high crystallinity and phase purity (>80 %) in the cubic phase were synthesized over large areas using fluorine chemistry and electron–cyclotron resonance (ECR) microwave plasma. Plasma‐enhanced fluorine chemistry was provided by a complex H~2~–BF~3~–N~2~–A

Low temperature growth of A1n and Al2O3

Low temperature growth of A1n and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam system

✍ Hiroshi Takaoka; Junzo Ishikawa; Toshinori Takagi 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 827 KB

Low temperature growth of AIN and Al2O3

Low temperature growth of AIN and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam system Hiroshi Takaoka et al,Thin Solid Films,157, 1988, 143–158

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 153 KB