✦ LIBER ✦

Low temperature growth interface for growing Boron Monophosphide on Si substrates

✍ Scribed by Suzuka Nishimura; Kazutaka Terashima

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 601 KB
Volume: 159-160
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(00)00086-6

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✦ Synopsis

Ž .

Ž . Boron monophosphide BP thin layer has been grown on Si 100 surface by using low temperature growth process. The Ž . low temperature layer is an aggregate of small crystalline particles with small inclined angles to Si 100 . This layer provides nucleation centers for growing BP layer. To elucidate the effect of BP layer, GaN layer was grown on BPrSi. It has been found that cubic GaN has been successfully grown on BP layer.

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