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GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substrates

✍ Scribed by Y. González; L. González; F. Briones


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
377 KB
Volume
127
Category
Article
ISSN
0022-0248

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Effect of High Temperature-Pressure on G
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The effect of high hydrostatic pressure -high temperature treatment on strain state of thin GaAs layers, grown on vicinal (001) Si substrate, misoriented towards [110] with different miscut angles and with two different orientations of GaAs layer in relation to the miscut direction, was investigated