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Low-Temperature Formation of Well-Aligned Nanocrystalline Si/SiOx Composite Nanowires

✍ Scribed by T.-C. Wong; C.-C. Yu; J.-J. Wu

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
407 KB
Volume
15
Category
Article
ISSN
1616-301X

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**The growth of well‐aligned Ga**~**2**~**O**~**3**~ **nanowires at low temperature** (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ra