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Growth and Characterization of Well-Aligned nc-Si/SiOx Composite Nanowires

✍ Scribed by J.-J. Wu; T.-C. Wong; C.-C. Yu

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
201 KB
Volume
14
Category
Article
ISSN
0935-9648

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We present a procedure whereby 2-3nm thick layers of SiO, are incorporated in (100) Si during molecular beam epitaxial growth. Analysis by Auger electron spectroscopy and transmission electron microscopy shows, that the delta function SiO, layers with a width of only a few lattice planes are embedde