Growth and characterization of delta type SiSiOx-heterostructures

✍ Scribed by R. Nötzel; I. Eisele

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 371 KB
• Volume: 5
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(89)90368-6

✦ Synopsis

We present a procedure whereby 2-3nm thick layers of SiO, are incorporated in (100) Si during molecular beam epitaxial growth. Analysis by Auger electron spectroscopy and transmission electron microscopy shows, that the delta function SiO, layers with a width of only a few lattice planes are embedded in a monocrystalline Si matrix. Capacitance -voltage measurements and resonant tunneling spectroscopy give evidence that the layers act as sharp potential barriers.

Silicon on insulator (SOI) structures have been of increasing interest for microelectronic applications.