Low temperature electron mobility in Ga0.5In0.5P/GaAs quantum well structures
β Scribed by T. Sahu; J. N. Patra; P. K. Subudhi
- Book ID
- 107678734
- Publisher
- Springer-Verlag
- Year
- 2009
- Tongue
- English
- Weight
- 293 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0019-5480
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π SIMILAR VOLUMES
We report the successful fabrication of a V-groove Al 0.5 Ga 0.5 As/GaAs/Al 0.5 Ga 0.5 As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire,
Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift, QCSS, of In 0.5 Ga 0.5 As/GaAs self-assembled quantum dots (QDs) grown on (100) and (311)B planes. An asymmetric dependence of the QCSS with respect to the direction of the electric field is observed in both cases. We