Low-Temperature Growth of Germanium Quan
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J. Shieh; T.S. Ko; H.L. Chen; B.T. Dai; T.C. Chu
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Article
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2004
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John Wiley and Sons
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English
โ 430 KB
๐ 1 views
## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductivelyโcoupled plasma CVD at 400โยฐC. Gold nanoparticles, attached to silicon oxide through a selfโassembled monolayer, were adopted as cataly