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Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

✍ Scribed by Qijin Cheng; S. Xu; J.W. Chai; S.Y. Huang; Y.P. Ren; J.D. Long; P.P. Rutkevych; K. Ostrikov

Book ID
108289951
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
576 KB
Volume
516
Category
Article
ISSN
0040-6090

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