✦ LIBER ✦

Low ohmic contact AlN/GaN HEMTs grown by MOCVD

✍ Scribed by Gu, Guodong; Dun, Shaobo; Lü, Yuanjie; Han, Tingting; Xu, Peng; Yin, Jiayun; Feng, Zhihong

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

InAlN/AlN/GaN HEMTs With Regrown Ohmic C

✍ Yuanzheng Yue; Zongyang Hu; Jia Guo; Sensale-Rodriguez, B.; Guowang Li; Ronghua 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 463 KB

Photoluminescence of GaN/AlN superlattic

✍ P. P. Paskov; J. P. Bergman; V. Darakchieva; T. Paskova; B. Monemar; M. Iwaya; S 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 176 KB

Improved AlGaN/GaN HEMTs Grown on Si Sub

✍ Wang, Yong; Yu, Nai-Sen; Li, Ming; Lau, Kei-May 📂 Article 📅 2011 🏛 Institute of Physics 🌐 English ⚖ 651 KB

Analyses of 2-DEG characteristics in GaN

✍ Peiqiang Xu; Yang Jiang; Yao Chen; Ziguang Ma; Xiaoli Wang; Zhen Deng; Yan Li; H 📂 Article 📅 2012 🏛 Springer-Verlag 🌐 English ⚖ 370 KB

AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sa

✍ Kolluri, S.; Yi Pei, ; Keller, S.; Denbaars, S.P.; Mishra, U.K. 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 373 KB

High-Performance Low-Leakage-Current AlN

✍ Medjdoub, F.; Zegaoui, M.; Ducatteau, D.; Rolland, N.; Rolland, P. A. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 341 KB