Photoluminescence of GaN/AlN superlattices grown by MOCVD
β Scribed by P. P. Paskov; J. P. Bergman; V. Darakchieva; T. Paskova; B. Monemar; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 176 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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π SIMILAR VOLUMES
Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al 0.88 In 0.12 N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the qu
n-Type GaN thin films grown by metal-organic chemical vapour deposition (MOCVD) were studied using photoluminescence (PL), photoreflectance (PR) and Raman scattering. In the PL spectra, the peak position of the band-edge transition shifts to the red side monotonically with increasing doping concentr