Material properties of GaN grown by MOCV
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Liu, Wei; Li, Ming-Fu; Feng, Zhe-Chuan; Chua, Soo-Jin; Akutsu, Nakao; Matsumoto,
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Article
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1999
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John Wiley and Sons
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English
⚖ 150 KB
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n-Type GaN thin films grown by metal-organic chemical vapour deposition (MOCVD) were studied using photoluminescence (PL), photoreflectance (PR) and Raman scattering. In the PL spectra, the peak position of the band-edge transition shifts to the red side monotonically with increasing doping concentr