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Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

✍ Scribed by H.K. Cho; C.S. Kim; Y.K. Hong; Y.-W. Kim; C.-H. Hong; E.-K. Suh; H.J. Lee

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 91 KB
Volume: 228
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200111)228:1<231::aid-pssb231>3.0.co;2-a

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