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Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

โœ Scribed by Wang, Yong; Yu, Nai-Sen; Li, Ming; Lau, Kei-May


Book ID
124094829
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
651 KB
Volume
28
Category
Article
ISSN
0256-307X

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๐Ÿ“œ SIMILAR VOLUMES


Growth and fabrication of AlGaN/GaN HEMT
โœ Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 262 KB

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H