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Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

✍ Scribed by Wang, S.; Hurst, J.B.; Ma, F.; Sidhu, R.; Sun, X.; Zheng, X.G.; Holmes, A.L., Jr.; Huntington, A.; Coldren, L.A.; Campbell, J.C.

No coin nor oath required. For personal study only.

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