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Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

✍ Scribed by Ning Duan; Wang, S.; Zheng, X.G.; Li, X.; Ning Li; Campbell, J.C.; Chad Wang; Coldren, L.A.

Book ID: 117882897
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 452 KB
Volume: 41
Category: Article
ISSN: 0018-9197
DOI: 10.1109/jqe.2005.843613

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