Low lying conduction states in (GaAs)n(AlAs)n superlattices
β Scribed by G.P. Srivastava; R.J. Gordon; Z. Ikonic
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 210 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Cyclotron resonance (CR) measurements have been carried out to evaluate the effective masses of electrons at the AlAs X point of the Brillouin zone in short period (GaAs),/(A1As). superlattices (SLs) with n = 8-14. The longitudinal effective mass was deduced to be m 1 = 1.04m 0 by analyzing a deviat
Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice
Cyclotron resonance (CR) measurements have been carried out to evaluate the effective mass of electron in (InGaAs) n /(GaAs) n superlattices (SLs) and (InGaAs) n /(AlAs) n SLs. To clarify the dependence of cyclotron mass on the monolayer number n, we measured CR signals using pulsed high-magnetic fi