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Low-frequency noise in Gallium Arsenide MESFETs

โœ Scribed by K.H. Duh; X.C. Zhu; A. van der Ziel

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
419 KB
Volume
27
Category
Article
ISSN
0038-1101

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They operate at 4 K and output characteristics taken at this temperature show high dynamic output impedance and transconductance. Using these devices it was possible to develop voltagesensitive preamplifiers for operation inside a dilution refrigerator at 1 K to amplify the signals from cryogenic pa